| 1.Title : ‘Three Dimensional numerical modeling and simulation of a uniformly doped GaAs MESFET photodetector’ |
| Period : Jul 01-06, 2007 |
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| Venue : |
| Details: ICMAT 2007, Suntec city conventional centre, Singapore |
| 2.Title : ‘Two dimensional analytical modeling of Drain induced barrier lowering of short channel Fully depleted SOI MESFET’ |
| Period : Oct.24-27, 2007 |
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| Venue : |
| Details: OMDAT, Proc of International conference on Optoelectronic materials and thin film for advanced Technology, Cochin |
| 3.Title : “A new Analytical description of Short channel Effects in Fully depleted single gate SOI MESFET for low power VLSI Application” |
| Period : Feb.21-23,2007 |
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| Venue : |
| Details: ICSCN, Madras Institute of Technology |
| 4.Title : “Analytical Thermal Noise Modeling of Short channel MOSFETs and Design of 5.2GHz Low noise Amplifier” |
| Period : Apr11-12,2006 |
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| Venue : |
| Details: OPTEST’06, National level Conference on Optimization Technologies on , Bannari amman Institute of Tech, Sathyamangalam, |
| 5.Title : “The Micro wave noise Modeling of InP/InGaAs HBTs” |
| Period : Apr11-12,2006 |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: OPTEST’06, Sri Bannari amman Institute of Tech, Sathyamangalam, National level Conference on Optimization Technologies |
| 6.Title : “High frequency Noise Analysis of InP-InGaAs single Hetero junction Bipolar Transistor” |
| Period : on Feb.17-18, 2006 |
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| Venue : |
| Details: National Conference on Novel Materials and Technologies, Sri Venkateswara University, Thirupathi |
| 7.Title : “Noise behavior of an OPFET” |
| Period : Feb.17-18, 2006 |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: National Conference on Novel Materials and Technologies, Sri Venkateswara University, Thirupathi |
| 8.Title : “A 2-D Model for the Threshold Voltage of Fully depleted Short Gate length Si-SOI MESFET” |
| Period : Feb. 18-19,2005 |
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| Venue : |
| Details: Twelfth National Convention of Electro-Chemists, Thiagarajar College of Engineering, Madurai |
| 9.Title : “An Improved I-V Model for Short Gate length MESFET” |
| Period : Feb. 18-19,2005 |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: Twelfth National Convention of Electro-Chemists, Thiagarajar College of Engineering, Madurai |
| 10.Title : “Improved SPICE Model of High frequency noise of BJT and HBT”, |
| Period : Mar. 2005 |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: National Conference on Advanced Communication system, ACCET, Karaikudi |
| 11.Title : “Capacitance Model for computing I-V Characteristics of Ion-Implanted OPFET”, |
| Period : Mar. 2005 |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: National Conference on Advanced Communication system, ACCET, Karaikudi |
| 12.Title : titled “Threshold voltage model of Short Channel GaAs OPFET for Optical Communication system” |
| Period : Mar. 2005 |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: National Conference on Advanced Communication system, ACCET, Karaikudi |
| 13.Title : “Capacitance Model of Ion-Implanted OPFET” |
| Period : Feb. 15-16,2005 |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: International topical conference in Applied Photonics-Super resolution and Photonics, University of Calcultta, Calcutta |
| 14.Title : “I-V characteristics of GaAs MESFET Photo detector for OEIC photo receivers” |
| Period : on Feb. 15-16,2005. |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: International topical conference in Applied Photonics-Super resolution and Photonics, University of Calcultta, Calcutta |
| 15.Title : “SPICE Modeling of an Ion-Implanted GaAs OPFET”, at OSI symposium on Optics and Opto Electronics |
| Period : Jan 19-21, 2005. |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: (SOOP’05), NPL, New Delhi |
| 16.Title : “Numerical Simulation of switching characteristics of GaAs OPFET” |
| Period : Jan 19-21, 2005 |
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| Chiefguest/ResourcePerson : |
| Venue : |
| Details: at OSI symposium on Optics and Opto Electronics(SOOP’05), NPL, New Delhi |
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